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Billy Ables / Age, Phone, Address

Found 48 people

Phones & Addresses

Name
Addresses
Phones
Billy Floyd Ables
PO Box 1223, Whitney, TX 76692
(254) 694-5021
Billy E Ables
1101 W Kansas St #1, Hobbs, NM 88242
Billy R Ables
1500 N Frances St, Terrell, TX 75160
(972) 563-5613
Billy Tindell Ables
4312 S 31St St #49, Temple, TX 76502
(254) 780-3143
Billy W Ables
508 Lumpkin Ave #54, Tupelo, MS 38801
(662) 840-0400
Billy Mason Ables
3488, Show Low, AZ 85902
(928) 536-4374
billy ables
3326 Hunt Club Rd N, Westerville, OH 43081
billy ables
1808 Westgate Dr, Terrell, TX 75160
(972) 563-5613
billy ables
4813 Stagecoach Trl, Temple, TX 76502
billy ables
486 S First Ave, Stephenville, TX 76401
(254) 965-4889
billy ables
15412 Bay Ridge Dr, Oklahoma City, OK 73165
(405) 366-8304
billy ables
2050 Doctor Parks Rd, Gates, TN 38037

Publications

Us Patents

Method And Apparatus For Packaging Circuit Devices

US Patent:
7867874, Jan 11, 2011
Filed:
May 19, 2009
Appl. No.:
12/468520
Inventors:
Billy D. Ables - Richardson TX, US
John C. Ehmke - Dallas TX, US
Roland W. Gooch - Dallas TX, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
H01L 21/46
H01L 21/30
US Classification:
438456, 257E21499, 257E21577, 438106, 438667, 438672
Abstract:
A hermetically sealed package includes a lid () hermetically bonded to a wafer or substrate (), with a chamber therebetween defined by a recess () in the lid. A circuit device () such as MEMS device is provided within the chamber on the substrate. A plurality of vias (-) are provided through the substrate, and each have a structure which facilitates a hermetic seal of a suitable level between opposite sides of the substrate. The vias provide electrical communication from externally of the assembly to the device disposed in the chamber.

Process For Fabricating A Three Dimensional Molded Feed Structure

US Patent:
2011011, May 19, 2011
Filed:
Nov 17, 2009
Appl. No.:
12/620562
Inventors:
Alberto F. Viscarra - Torrance CA, US
David T. Winslow - Culver City CA, US
Billy D. Ables - Richardson TX, US
Kurt S. Ketola - Los Angeles CA, US
Kurt J. Krause - Redondo Beach CA, US
Kevin C. Rolston - Playa Del Rey CA, US
Rohn Sauer - Encino CA, US
James R. Chow - San Gabriel CA, US
International Classification:
H01P 11/00
H05K 3/06
US Classification:
29600, 29847
Abstract:
A process for fabricating a three dimensional molded feed structure is provided. In one embodiment, the invention relates to a process for fabricating a three dimensional radio frequency (RF) antenna structure, the process including providing a flexible circuit substrate, forming a first preselected pattern of channels in the flexible circuit substrate, depositing a conductive layer on the formed flexible substrate, and removing portions of the conductive layer to form a plurality of conductive traces.

Method For Sealing Vias In A Substrate

US Patent:
2008009, May 1, 2008
Filed:
Oct 31, 2006
Appl. No.:
11/555090
Inventors:
Premjeet Chahal - Plano TX, US
Billy D. Ables - Richardson TX, US
Francis J. Morris - Dallas TX, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
B23K 35/12
US Classification:
228245
Abstract:
According to one embodiment of the invention, a method for sealing one or more vias comprises providing a first substrate having vias, forming an adhesion layer on an inner surface of the vias, sandwiching a solder layer between the first substrate and a second substrate, and elevating of the first substrate, second substrate, and solder layer to a temperature above a eutectic point and below a melting point of the solder layer. The act of elevating the solder layer to a temperature above the eutectic point and below the melting point causes the solder layer to flow into the vias in a generally consistent manner.

Wafer Level Interconnection

US Patent:
6633079, Oct 14, 2003
Filed:
Sep 10, 2002
Appl. No.:
10/241062
Inventors:
James L. Cheever - Richardson TX
Charles L. Goldsmith - Plano TX
John C. Ehmke - Garland TX
Billy D. Ables - Richardson TX
Assignee:
Raytheon Company - Lexington MA
International Classification:
H01L 2314
US Classification:
257723, 257777
Abstract:
RF MicroElectroMechanical Systems (MEMS) circuitry ( ) on a first high resistivity substrate ( ) is combined with circuitry ( ) on a second low resistivity substrate ( ) by overlapping the first high resistivity substrate ( ) and MEMS circuitry ( ) with the low resistivity substrate ( ) and circuitry ( ) with the MEMS circuitry ( ) facing the second circuitry ( ). A dielectric lid ( ) is placed over the MEMS circuitry ( ) and between the first substrate ( ) and second substrate ( ) with an inert gas in a gap ( ) over the MEMS circuitry ( ). Interconnecting conductors ( ) extend perpendicular and through the high resistivity substrate ( ) and through the dielectric lid ( ) to make electrical connection with the low resistivity substrate ( ).